Formation of Atom Wires on Vicinal Silicon
نویسندگان
چکیده
منابع مشابه
Formation of atom wires on vicinal silicon.
The feasibility of creating atomic wires on vicinal silicon surfaces via pseudomorphic step-edge decoration has been analyzed for the case of Ga on Si(112). Scanning tunneling microscopy and density functional theory calculations indicate the formation of Ga zigzag chains intersected by quasiperiodic vacancy lines or "misfit dislocations." This structure strikes a balance between the system's d...
متن کاملSelf-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si111 surface.
Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter approximately 2 nm and periodicity 2.7 nm in the very narrow range of growth temperature...
متن کاملRefractometric Sensor Based on Silicon Photonic Wires
Integrated optical (IO) refractometric sensors have particularly interesting applications in label-free biosensing and in measuring chemical compositions. A current trend in the research of optical refractive-index sensors focuses on making the sensors compact and highly sensitive [1-3]. We have investigated the refractometric sensing properties of grated silicon photonic wires (GSPW), fabricat...
متن کاملInstabilities of Vicinal Silicon ( 111 ) Surfaces
The morphological instabilities of vicinal Si(111) due to a DC electric current and due to the 7 x 7 reconstruction are studied using a variety of diffraction and imaging techniques. The current induced instabilities which occur at sublimation temperatures or under conditions of step-flow produce morphological features on length scales appropriate for optical studies, 5 50,u. Optical microscopy...
متن کاملEffects of Gas Ion Density on Formation of Gas-Atom Encapsulated Silicon Fullerenes
Silicon (Si) cage clusters, i.e., Si fullerenes doped with argon (Ar) atom are formed using a Si plasma. The Si plasma is generated by irradiation of an electron beam to a Si lump in Ar gas atmosphere. When the Ar gas pressure is 0.08 Pa or more, the Ar plasma is also generated by the collision of the electron beam and superimposed upon the Si plasma. The ionized Si agglutinates in the diffusio...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2004
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.93.126106